epitaxial相关论文
Carbon nanomaterials, such as fullerene, carbon nanotubes (CNT) and graphene have drawn great interests due to their int......
Ba2IrO4 is a sister compound of the widely investigated Sr2IrO44 and has no IrO6 octahedral rotation nor net canted anti......
The crystallographic tilt in GaN layers grown by epitaxial lateral overgrowth (ELO) onsapphire (0001) substrates was inv......
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The phase-field crystal(PFC) model is employed to study the shape transition of strained islands in heteroepitaxy on vic......
Faceting transitions in crystal growth and heteroepitaxial growth in the anisotropic phase-field cry
We modify the anisotropic phase-field crystal model(APFC),and present a semi-implicit spectral method to numerically sol......
分析了金刚石薄膜热导率的声子导热机理,从金刚石薄膜晶体结构的角度总结了影响热导率的因素,例如晶界、晶内杂质、缺陷、晶粒尺寸......
Spectroscopic and scanning probe analysis on large-area epitaxial graphene grown under pressure of 4
We produced epitaxial graphene under a moderate pressure of 4 mbar(about 400 Pa) at temperature 1600℃. Raman spectrosco......
Green Synthesis of Polyimides and Their CNT Based Nanohybrid ShishKebabs through Reaction-induced Cr
A green approach to the synthesis and morphological control of high performance polyimides and their nanohybrid shish-ke......
Influence of Teflon Substrate on Crystallization and Enzymatic Degradation of Polymorphic Poly(butyl
Oriented and non-oriented Teflon films, which were found to have the same crystalline structure, but different surface m......
The nanowire and whisker heterostructures of tin dioxide were fabricated by the chemical vapor deposition technique.It w......
The La2/3Ca1/3Mn O3-δ film has been deposited on the(001) Sr Ti O3 substrate and its temperature-dependent photoconduct......
In-situ wafer bowing measurements of GaN grown on Si(111) substrate by reflectivity mapping in metal
In this work, the wafer bowing during growth can be in-situ measured by a reflectivity mapping method in the 3×2 Thomas......
The crystallization behavior of poly(ethylene adipate) (PEA) on highly oriented high-density polyethylene (PE) substrate......
The evolution of the recrystallization phase in amorphous 6 H-SiC formed by He implantation followed by thermal annealin......
We report on an improved metal-graphene ohmic contact in bilayer epitaxial graphene on a SiC substrate with contact resi......
Preparation of Lead-based Perovskite Structure Ferroelectric Thin Films by Sol-Gel Method and the Pr
Polycrystalline PZT,PLT and PbTiO ferroelectric thin films,highly oriented PbTiOferroelectric thin films and epitaxial ......
A preliminary result on photoresponse of granular YBa_2Cu_3O_(7-x) (YBCO) weak link is reported. The Josephson eritical ......
Single crystal GaN films of hexagonal modification have been fabricated on Al_2O_3/Si (001) substrates via a low pressur......
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Interfacial-Strain-Induced Structural and Polarization Evolutions in Epitaxial Multiferroic BiFeO_3(
Varying the film thickness is a precise route to tune the interfacial strain to manipulate the properties of the multife......
The methods for synthesizing one-dimensional Si nanowires with controlled diameter are introduced. The mechanism for th......
研究混合信号集成电路中衬底噪声耦合反衬底噪声对模拟／数字电路的影响。采用带外延层的重掺杂型衬底，对混合信号集成电路中研究衬底......
Gallium Nitride film was successfully separated from sapphire substrate by laser radiation. The absorption of the 248nm ......
通过硅 (111)衬底淀积的单层 Co或 Co/ Ti双金属层在不同退火温度的固相反应 ,在硅上形成制备了多晶和外延 Co Si2 薄膜 .用电流 -......
Microtwins in the 3C-SiC films grown on Si(001) by APCVD were analyzed in detail using an X-ray four-circle diffractomet......
基于等价掺杂转换理论的应用 ,得到了解析计算扩散 -外延穿通 P- N结击穿电压和击穿峰值电场强度的一系列结果 .介绍了等价掺杂转......
近年来人们报道了用ＭＢＥ方法生长ＧａＮ的飞速进展，利用ＲＦ－ＭＢＥ方法可以获得高的ＧＡＮ生长速率和高的电子迁移率。本文讨论了用ＲＦ－ＭＢＥ方法在蓝宝石衬底上生长ＧａＮ过程......
Rf sputtering in an Ar discharge of a SiC target has been used to depositβ-SiC films on Si-(111) substrates. XRD and in......
The effect of a 0.9 nm Mo interlayer at the interface of Ti film deposited on a Si substrate on phase formation of TiSi......
采用 MOCVD方法 ,利用二甲基肼为氮源 ,进行了 Ga NAs材料的生长 .利用高分辨 X射线衍射与二次离子质谱测试方法确定了材料中氮的......
介绍了新近研制出的一种电阻加热式 CVD/ L PCVD Si C专用制备系统 ,并利用该系统以 Si H4、C2 H4和 H2 作为反应气体在直径为 5 0......
A new LDMOST structure, named B-LDMOST that has a buried layer under thedrain is proposed. The buried layer is not conn......
The DC characteristics of SiGe HBT irradiated at different electron dose have been studied in a comparison with those of......
提出了用同步外延法设计和制造具有双介质层栅结构和非饱和电流电压特性的高频高功率静电感应晶体管的关键技术 .讨论了寄生栅源电......
介绍了多晶硅、单晶硅的同步外延 .采用两步外延工艺 ,研究了硅烷流量、外延时间以及外延温度对外延质量参数 α的影响 .硅烷流量......
Photoluminescence spectra were used to characterize the boron-doped Si layers grown by molecular beam epitaxy using HBO_......
The properties of the carbon contaminated silicon epitaxial layer and its surface have been studied by means of JAMP-10......
Effect of Substrate Nitridation on Properties of Thick GaN Film Grown by Hydride Vapour Phase Epitax
Thick GaN films were grown on the sapphire substrate by hydride vapour phase epitaxy. The properties of GaN films were f......
The growth front evolution of GaN thin films deposited on sapphire substrate by hydride vapor phase epitaxity has been s......
In an attempt of being used as buffer layers and electrodes for the textured BaTiO3 (BTO) ferroelectric thin films, high......
The persistent photoconductivity(PPC) phenomena in n-type GaN Films grown by metalorganic chemical vapor deposition(MOCV......
According to Maxwell’s theory, the optical transmission characteristics in GeSi/Si superlattice nanocrystalline layer h......
An optically activated optical switch based on suppression of mode interference (SMI) is presented. The imaging properti......
With diethylamine as a solvent, ZnSe films were formed on the Si substrate directly from zinc and selenium through the m......
在分子束外延生长的InAs/In0.52Al0.48As/InP异质结体系中,形成InAs量子线.这些InAs量子线在生长和结构方面有一些独到的特性,并介......
The paper describes the growth of a germanium (Ge) film on a thin relaxed Ge-rich SiGe buffer. The thin Ge-rich SiGe buf......
Fabrication of GaAs/Si heterostructures and their photoelectric properties are investigated by Raman, photoluminescence ......
A NFFP HVI structure which implements high breakdown voltage without using additional FFP and process steps is proposed ......
