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Scaling of silicon field-effect transistors has fueled the exponential development of microelectronics in the past 60 ye......
Over the last sixty years,the scaling of silicon-based complementary metal-oxide-semiconductor(CMOS)field-effect transis......
Organic semiconductors (OSCs) are the key components of organic electronic devices. In conventional organic field-effect......
The narrow bandgap of InSb(180 meV)gives rise to considerable large leakage currents in the off-state regime of field-ef......
In this presentation, we present our recent research advances in preparation and characterization of high quality graphe......
Recent years have seen substantial improvements in the structural, chemical, and electronic monodispersity of carbon nan......
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Different switching frequencies are required when SiC metal-oxide-semiconductor field-effect transistors(MOSFETs)are swi......
Organic permeable base light-emitting transistor:a new concept device architecture for display techn
As an important part of the information industry,display technology has been playing a very important role in the develo......
Density functional theory study on organic semiconductor for field effect transistors: Symmetrical a
Density functional theory (DFT) calculations were carried out to investigate the organic field effect transistor (OFET) ......
Copper phthalocyanine (CuPc) nanoribbon field-effect transistors were implemented as chemical sensors. They showed fast ......
A systemic solution for radiation hardened design is presented. Besides, a series of experiments have been carried out o......
本文简要地介绍了有机半导体中载流子迁移率的几种模型,着重阐述了测量有机半导体中载流子迁移率的各种方法的测试原理。主要有如......
Theoretical study of current-voltage characteristics of carbon nanotube wire functionalized with hyd
A functionalized single-walled carbon nanotube (SWCNT) of a finite length with a ring-like hydrogenation around its surf......
We introduced a dual electron accepting layer composed of tetrafluoro-tetracyanoquinodimethane(F4-TCNQ) and MoO3 for the......
A vertical carbon nanotube field-effect transistor(CNTFET) based on silicon(Si) substrate has been proposed and simulate......
Short-Term Synaptic Plasticity Mimicked on Ionic/Electronic Hybrid Oxide Synaptic Transistor Gated b
An indium e zinc-oxide(IZO) based ionic/electronic hybrid synaptic transistor gated by field-configurable nanogranular S......
Fluorinated p-n Type Copolyfluorene as Polymer Electret for Stable Nonvolatile Organic Transistor Me
In this study, a kind of fluorinated copolyfluorene, named poly[(4-(octyloxy)-9,9-diphenylfluorene-2,7-diyl)-alt-(2,3,5,......
Theoretical Investigation on the Charge Transport Properties of 2,5-Di(cyanovinyl)-thiophene/furan w
Exploring, designing, and synthesizing novel organic field-effect transistor(OFET) materials have kept an important and ......
Copper is an essential element in the environment and the human body,but at the same time,exposure to high concentration......
Effect of Metal Contact and Rapid Thermal Annealing on Electrical Characteristics of Graphene Matrix
Development of graphene field effect transistors(GFETs) faces a serious challenge of graphene interface to the dielectri......
We report on an improved metal-graphene ohmic contact in bilayer epitaxial graphene on a SiC substrate with contact resi......
TVs are more useful than radios.From TV you can see and hear what is happening in the world.However,radios are not disap......
In the nonlinear dynamic system the chaotic phenomenon can only appear in the autonomous system whose order is higher t......
1 Multiple-β transistor and linear AND-OR gate The high-speed and real-time processing of information requires a highe......
THE low-noise preamplifier, as one of the major circuits in signal detection system, consists ofthe low noise amplifier......
By analysing problems in the traditional design theory of digital circuits it is proposed that both switching variable a......
每样成功的现代电子装置都是集众人之手制造的多个零件组装而成。晶体管如何成为制造现代机器的基础材料的故事解释了原因何在。我......
The paper considers three common snubber circuits used on gate turn-off thyristor and/or insulated gate bipolar transis......
This paper presents a simple novel technique-forward gated-diode R-G current method-to determine the lateral lightly-do......
DESIGN OF LOW-VOLTAGE AND LOW-POWER FULLY INTEGRATED FILTER BASED ON LOG-DOMAIN CURRENT-MODE INTEGRA
In this paper a novel log-domain current-mode integrator based on MOS transistors in subthreshold is proposed. The inte......
The Simulated Study on Si-Photoelectronic Negative Resistance Devices and Si-Ge Hetero-junction Hybr
Abstract: “The study on the silicon photoelectronic negative resistance devices and the ones with high frequency and hi......
With the development of ULSI silicon technology, metal oxide semiconductor field effect transistor (MOSFET) devices are ......
Quasi-two-dimensional subthreshold current model of deep submicromter SOI drive-in gate controlled h
We have analyzed the operating mechanism of the novel deep submicrometer SOI drive-in gate controlled hybrid transistor ......
我们对 PHEMT材料中应变沟道 In Ga As层生长条件进行了优化 ,并采用了 LT-Ga As中缺陷扩散的阻挡层。功率 PHEMT器件结果为在栅长......
使用半导体器件数值分析工具 DESSISE- ISE,对正向栅控二极管 R- G电流表征 NMOSFET沟道 pocket或halo注入区进行了详尽的研究 .数......
报道了一种新结构的功率栅控晶闸管 ,称其为槽栅 MOS控制的晶闸管 (TMCT) .在该器件结构中 ,采用 U-MOS控制晶闸管的开启和关闭 .......
We conduct a study on the superlinear transport of multilayer graphene channels that partially or completely locate on s......
The hot-carrier-induced oxide regions in the front and back interfaces are systemati-cally studied for partially deplet......
Co synthesis silicides with good properties were prepared using MEVVA ion implantation with flux of 25-125μA/cm2 to doe......
Forward gated-diode Recombination-Generation(R-G) current method is appliedto an NMOSFET/SOI to measure the stress-indu......
The requirement of reduced RC delay and cross-talk for multilevel interconnect ULSI applications has enthusiastically d......
提出了一种基于灵敏放大器的新型触发器 .和其它触发器相比 ,该触发器在近似相等的功耗下能以更快的速度工作 ,并且其所需要的 MOS......
Annealing effect of platinum-incorporated nanowires created by focused ion/electron-beam-induced dep
Focused ion-beam-induced deposition(FIBID) and focused electron-beam-induced deposition(FEBID) are convenient and useful......
Carbon nanomaterials,including the one-dimensional(1-D) carbon nanotube(CNT) and two-dimensional(2-D) graphene,are heral......
在 WKB近似的理论框架下 ,提出了一个 MOS器件中栅介质层直接隧穿电流的模型 .在这个模型中 ,空穴量子化采用了一种改进的单带有效......
A new LDMOST structure, named B-LDMOST that has a buried layer under thedrain is proposed. The buried layer is not conn......
本文对SiGe/Si HBT及其Si兼容工艺进行了研究,在研究了一些关键的单项工艺的基础上,提出了五个离速SiGe/Si HBT结构和一个低噪声Si......
