论文部分内容阅读
Co synthesis silicides with good properties were prepared using MEVVA ion implantation with flux of 25-125μA/cm2 to does of 5×1017/cm2. The structure of the silicides was investigated using X-ray diffraction (XRD) and transmission electron microscopy (TEM). TEM analysis shows that if the ion dose is greater than 2×1017/cm2, a continuous silicide layer will be formed. The sheet resistance of Co silicide decreases with an increase in ion flux and ion dose. The formation of silicides with CoSi and CoSi2 are identified by XRD analysis. After annealing, the sheet resistance decreases further. A continuous silicide layer with a width of 90-133 nm is formed. The optimal implantation condition is that the ion flux and dose are 50μA/cm2 and 5×1017/cm2, respectively. The optimal annealing temperature and time are 900℃ and 10 s, respectively. The ohmic contact for power microwave transistors is fabricated using Co ion implantation technique for the first time. The emitter contact resistance and noise of the t
Co synthesis silicides with good properties were prepared using MEVVA ion implantation with flux of 25-125 μA / cm 2 to do 5 × 10 17 / cm 2. The structure of the silicides was investigated using X-ray diffraction (XRD) and transmission electron microscopy ) TEM analysis shows that if the ion dose is greater than 2 × 10 17 / cm 2, a continuous silicide layer will be formed. The sheet resistance of Co silicide decreases with an increase in ion flux and ion dose. The formation of silicides with CoSi The optimal implantation condition is that the ion flux and dose are 50 μA / cm 2 and 5 × 1017 / cm2, respectively. The optimal annealing temperature and time are 900 ° C and 10 s, respectively. The ohmic contact for power microwave transistors is fabricated using Co ion implantation technique for the first time. The emitter contact resistanc e and noise of the t