报道了一种新结构的功率栅控晶闸管 ,称其为槽栅 MOS控制的晶闸管 (TMCT) .在该器件结构中 ,采用 U-MOS控制晶闸管的开启和关闭 .结构中不存在任何的寄生器件 ,因此 ,消除了在其它结构的栅控晶闸管中由寄生晶体管引起的各种问题 ,所以 TMCT会有优良的电特性 .实验结果表明 ,多元胞 TMCT (6 0 0 V,有源区面积0 .2 m m2 )的开态压降在 30 0 A / cm2 时为 1.2 5 V,最大可控电流在栅压为 - 2 0 V和电感负载下达到了 2 96 A/ cm2 . A new structure of power-controlled thyristors, called TMCTs with trench gate MOS control, is reported, in which the U-MOS control thyristor is turned on and off without any parasitic devices in the structure Therefore, the problems caused by the parasitic transistors in the gate-controlled thyristors of other structures are eliminated, so the TMCT has excellent electrical characteristics. The experimental results show that the multicellular TMCT (600 V, active area area) 2 m m2) is 1.2 5 V at 30 A / cm2, and the maximum controllable current is 2 96 A / cm2 at gate voltage of -20 V and inductive load.