Schottky相关论文
Ice desorption is the main mechanism causing the release of complex molecules from solid to gas phase in star forming re......
AlGaN alloys are the most promising materials for ultraviolet (UV) detection in the solar-blind (200-290 nm) region.[1] ......
Achieving high-responsivity near-infrared detection at room temperature by nano-Schottky junction ar
A room temperature sub-bandgap near-infrared (λ> 1100 nm) Si photodetector with high responsivity achieved. The Si phot......
The classical Schottky problem is concerned with characterization of Jacobian varieties of compact Riemann surfaces amon......
Leakage behavior and distortion of the polarization hysteresis loop in ferroelectric thin films are analyzed by applying......
Preparation,characterization and application of CuCrO_2/ZnO photocatalysts for the reduction of Cr(V
The delafossite CuCrO2 elaborated by sol-gel from 40nm diameter colloid is optically active in the visible region.It is ......
钇铝石榴石晶体Y3Al5O12(YAG)是最常用的固体激光基体材料。YAG晶体中各种缺陷的存在对基体材料的结构和性能都有不同程度的影响。......
光生载流子在半导体/溶液界面处发生的表面复合过程,是制约半导体光电极体系光-电转化效率提高的关键因素之一.本文利用光电流测量......
Junction properties and conduction mechanism of new terbium complexes with triethylene glycol ligand
Terbium-picrate triethylene glycol(EO3-Tb-Pic) complex was prepared in thin film and single layer device structure of IT......
A novel Sr2CuInO3 S oxysulfide p-type semiconductor photocatalyst has been prepared by solid state reaction method and i......
Prof.Xiong Yujie’s laboratory at the School of Chemistry and Materials Science,University of Science and Technology of ......
Lateral resistance reduction induced by light-controlled leak current in silicon-based Schottky junc
Lateral resistance of silicon-based p-type and n-type Schottky junctions is investigated. After one electrode on a metal......
With the support by the National Natural Science Foundation of China and the Ministry of Science and Technology of China......
Recently, modifications of charge density wave(CDW) in two-dimensional(2D) show intriguing properties in quasi-2D materi......
本文提出一种采用ＧａＡｓＭＥＳＦＥＴ工艺制造的平面微波变容管Ｃ－Ｖ特性解析模型，该模型着眼于小尺寸、平面化工艺及离子注入工艺，充分考虑了由其产生的栅下......
聚合物材料由于成本低廉,器件制备工艺简单,高量子效率,因此近年来越来越受到人们的重视。用聚合物材料作为有源层制作的发光二极......
本文在实验基础上，对多孔硅的形成形貌学进行了研究。用日立Ｓ－７５０型扫描电镜观测了不同条件下生长的多孔硅的正面和侧面孔的形貌。对得到......
近几年来,人们对有机材料尤其是带有π共轭双键的导电聚合物产生了极大兴趣,因为这类导电聚合物在结构上具有和无机半导体(如Si等)......
Gas sensitivity of Pt/InP Schottky barrier diode was characterized by I-V, C-V and complex impedance under different ga......
国际整流器公司(简称IR)近日推出业内最低V_F值20V肖特基二极管(Schottky Diodes)系列和低成本45V MBR系列肖特基二极管。 创新的......
The intrinsic width of the energy distribution from Schottky and field emission sources is betwen 0.2 and 0.8eV.For high......
In this paper standard techniques for characterization of HgCdTe liquid phase epitaxial layers (LPE) were presented. The......
研究了高温和大电流应力对 ＴｉＡｌ／ ＧａＡｓ和 ＴｉＰｔＡｕ／ ＧａＡｓ Ｓｃｈｏｔｔｋｙ二极管 Ⅰ～ Ⅴ特性及对 Ｒｉｃｈａｒｄｓｏｎ图 的影响．研究发现，随着应力时间的增加，在 Ｒｉｃｈａｒｄｓｏｎ图上，对ＴｉＡｌ／ ＧａＡｓ Ｓｃｈｏｔｔｋｙ二极管势垒高度快速降低......
PapersNo. PagePerspective of Solid State Electronics in New Century L IN Jinting 1 1……………………………………A 19......
国际整流器公司(International Rectifier,简称 IR)推出70种新型高可靠性肖特基(Schottky)二极管,面向军事、宇航及运输等应用领......
报道了 4H- Si C混合 PN / Schottky二极管的设计、制备和特性 .该器件用镍作为肖特基接触金属 ,使用了结终端扩展 (JTE)技术 .在......
运用自洽的蒙特卡罗方法模拟了肖特基接触的隧穿效应 .模拟的内容包括具有不同的势垒高度的金属 -半导体接触在正向和反向偏置下的......
本文利用d8(D4h)全组态混合统一晶场理论对Ni(pz)Br2型化合物的吸收光谱、基态ZFS、EPR参量、低温下的Schottky热容量和顺磁磁化率......
A ferroelectric memory diode that consisted of Au/PZT/BIT/p-Si multilayer configuration was fabricated by pulsed laser d......
Semiconductor nanowires, with their unique capability to bridge the nanoscopic and macroscopic worlds, have been demonst......
利用极化曲线、交流阻抗谱、Mott-Schottky曲线分析、循环极化曲线的方法,研究了X80抗大变形(X80HD)管线钢在模拟土壤碱性腐蚀环境......
引言近年来,以半导体-电解质界面的Schottky势垒为基础的光电化学电池的研究,日益引起了人们的重视,因为它们可以直接将太阳能转......
前文已报道聚N-乙烯基咔唑(PVCz)-2,4,7三硝基芴酮(TNF)(1:0.5)电荷转移复合物的暗导,其伏-安特性的非欧姆部分电导的对数与V~(1/......
Low-frequency oscillations in channel current are usually observed when measuring the GaAs MESFET’s output characterist......
Hexagonal microtube ZnO was firstly grown on single crystal p-Si (111) substrates by hydrothermal method, and fabricated......
旋转环盘电极(RRDE)研究表明,多晶n-CdSe电极表面经金属离子溶液处理,提高溶液的pH及增加溶液中还原剂K_4Fe(CN)_6的浓度均使该电......
An organics/metal Schottky diode is fabricated using 3, 4∶9, 10- perylenetetracarboxylic-dianhydride(PTCDA) thin film s......
The organic static induction transistor (OSIT) fabricated with organic semiconductor material copper-phthalocyanine(CuPc......
Preparation and operation characteristics of organic semiconductor transistor using thin film Al gat
The organic static induction transistors (OSITs) are fabricated by the method of evaporating and plating in a vacuum wit......
将Ti硅化物-p型体区形成的反偏肖特基势垒结构引入绝缘体上硅动态阈值晶体管.传统栅体直接连接DTMOS,为了避免体源二极管的正向开......
测量了单晶CdS电极在多硫体系和铁氰体系溶液中的光极化特性和波长响应特性,并由此计算出转换效率、填充因子和禁带宽度等有关参数......
对八个含方酸结构的菁染料所构成的Schottky势垒型的太阳能电池,研究了其结构与光电参量之间的关系,並与无机材料太阳能电池的光电......
Double ferromagnetic metal/semiconductor schottky barrier confined quasi-ballistic transport channel
Spin polarizer is one of the most important devices for the newly developing field of spintronics,which may revolute the......
通过求解泊松方程得到了双栅肖特基势垒MOSFET的解析模型.这个解析模型包括整个沟道的准二维电势分布和适用于短沟双栅肖特基势垒M......
Nanoscale Schottky barrier metal oxide semiconductor field-effect transistors (MOSFETs) are explored by using quantum me......
