P-TYPE相关论文
Enhanced Thermoelectric Performance of Non-equilibrium Synthesized Fe0.4Co3.6Sb12-xGex Skutterudites
The p-type Ge doped Fe0.4Co3.6Sb12-xGex skutterudites with multi-scaled impurity dots (500 nm-2 mm) were successfully pr......
Nickel oxide p-type electrode interlayer in CH3NH3PbI3 perovskite/fullerene planar-heterojunction hy
The work presented the application of nickel oxide as the p-contact to fabricate the decent perovskite-based photovoltai......
In recent years,wurtzite GaN and related Ⅲ–V compound semiconductors have attracted considerable attention in high-bri......
使用分子束外延方法在c面蓝宝石衬底上生长了系列氮掺杂ZnO薄膜样品。在连续的富锌气氛环境中生长的样品, 由于存在大量的施主缺陷......
Partial P-Type Metal Ions Doping Induced Variation of Both Crystal Structure and Oxygen Vacancy With
Partial P-type metal ions doping(PPMID)is an alternative method to further enhance the gas sensing performance of N-type......
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No external load measurement strategy for micro thermoelectric generator based on high-performance S
In this study,a micro in-plane p-type thermoelectric generator(TEG),which consists of thin-film Si1-x-yGexSny ternary al......
回顾性分析2016年6月至2018年1月北京协和医院神经科的18例Lambert-Eaton肌无力综合征（LEMS）患者的临床资料并应用放射免疫沉淀法检......
New types of defects in 15.24 cm diameter and 20.32 cm diameter Czochralski silicon crystals were found after SCI cleani......
目的 利用硝酸甘油实验性偏头痛大鼠模型探讨P/Q型钙离子通道在偏头痛发病机制中的作用.方法 20只sD大鼠(雌雄各半)随机分为生理盐......
This paper reports the performances of Ti/Al based ohmic contacts fabricated on highly doped p-type 4H-SiC epitaxial lay......
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该文从挂篮荷载计算、施工流程、支座及临时固结施工、挂篮安装及试验、合拢段施工、模板制作安装、钢筋安装、混凝土的浇筑及养生......
该文从挂篮荷载计算、施工流程、支座及临时固结施工、挂篮安装及试验、合拢段施工、模板制作安装、钢筋安装、混凝土的浇筑及养生......
该文从挂篮荷载计算、施工流程、支座及临时固结施工、挂篮安装及试验、合拢段施工、模板制作安装、钢筋安装、混凝土的浇筑及养生......
使用分子束外延方法在c面蓝宝石衬底上生长了系列氮掺杂ZnO薄膜样品.在连续的富锌气氛环境中生长的样品,由于存在大量的施主缺陷,......
通过氮气等离子体辅助脉冲激光沉积(PLD)技术制备了氮掺杂氧化锌(ZnO:N)薄膜.经过低温快速热退火(RTA)处理后,ZnO:N薄膜呈现p型导......
热电材料是一种极具潜力的能源材料。由于其既可以用于军事、航天等高科技领域,也可用于工业废热发电、小型可穿戴设备的能源供应......
The electron affinities of the isomer XC6H4CH2/ XC6H4CH2- (X=F, Cl, Br) species have been determined using seven density......
<正>In the ultra-thin relaxed SiGe virtual substrates, a strained-Si channel p-type Metal Oxide Semiconductor Field Effe......
薄膜晶体管(TFT)作为平板显示领域的核心技术之一,在电子信息产业中发挥了重要作用。近年来,氧化物薄膜晶体管发展迅速,高迁移率、......
对Ｓｉ掺杂和Ｚｎ掺杂ｐ型ＧａＡｓ液相外延材料在３００Ｋ－６０Ｋ温区的辐射复合进行了光致发光研究。用发射波长为５１０．６ｎｍ和５７８．２ｎｍ的溴化亚铜激光器作为激发光源，样品的低温由拟循......
为了探明棉花P-type ATPases基因在植物不同组织和多种逆境条件下的表达情况,利用棉花黄萎病菌的P-type ATPases蛋白序列,在GenBan......
通过将含有原子数分数为2％锂的Zn-Li合金薄膜和金属锌薄膜在500℃氮气氛中退火2h，然后在700℃氧气氛下退火1h的方法分别制备出ZnO：Li......
TiO2陶瓷在射频溅射过程中表面成分发生改变,变化后的陶瓷表面具有良好的导电性,可作为靶材采用直流溅射法在玻璃基片上制备TiO2薄......
以醋酸锌为溶质、碳酸钠为钠源，采用溶胶-凝胶法在Si（100〉衬底上制备了钠掺杂ZnO薄膜，掺杂浓度分别为0，0．018，0．036，0．045，0．063和0．09mol／L。......
通过将含有原子百分含量为29／6锂（2at％）的锌锂（Zn—Li）合金薄膜在500℃氮气氛中退火2h，然后在700℃氧气氛下退火1h的方法分别制备出P型锂......
宽带隙的GaN作为半导体领域研究的热点之一,近年来发展得很快.p型GaN的欧姆接触问题一直阻碍高温大功率GaN基器件的研制.本文讨论......
文章介绍了动态反射式椭圆偏振光谱技术的原理,采用椭圆偏振光谱技术测量得到P型Si(111)晶片,利用直流溅射制备的不同厚度Cu膜样品......
通过引入（NPB/MoO3）x/NPB作为空穴传输层,获得了低驱动电压的有机电致发光器件（OLEDs）,（NPB/MoO3）x为多层结构（x为0,1和2）。通过对比发现,......
采用金属有机化学气相沉积方法在玻璃上生长了掺氮的低电阻P型ZnO薄膜．实验使用NO和N2O共同作为氧源，且NO同时作为掺氮源，二乙基锌作......
Realizing super-long Cu2O nanowires arrays for high-efficient water splitting applications with a co
Nanowire(NW) structures is an alternative candidate for constructing the next generation photoelectrochemical water spli......
We investigated the electronic and magnetic properties for O or Zn defect of (Cu, N) or (Cu, F)-co- doped ZnO with the c......
Nickel oxide (NiO) thin films with thickness ranging in the interval 0.2 - 3.5 μm have been deposited onto conductive t......
In-doped (Se0.7Te0.3) thin films (In: 0, 0.05, and 0.08wt%) with thickness of (150 ± 25 nm) have been deposited on ......
基于p型透明导体在平面显示、透明二极管和太阳能发电等领域的广泛应用前景，一些含铜的透明导体材料因具有优异的性能而备受人们关......
使功能凉下来毫无疑问是衣服的最理想的属性之一。尽管有改变材料(脉冲编码调制) 研究的阶段上的最近的进步，有使能力凉下来的足够......
Nitrogen-doped, p-type ZnO thin films were grown successfully on sapphire (0001) substrates by using atomic layer epitax......
采用离子注入技术对射频磁控溅射制备的ZnO薄膜进行N掺杂，通过退火实现了ZnO薄膜的P型转变。利用X射线衍射（XRD）和Hall实验对样品热退......
