New types of defects in 15.24 cm diameter and 20.32 cm diameter Czochralski silicon crystals were found after SCI cleaning. Their annealing behavior was studied. It was suggested that these defects become larger during high temperature annealing and disappear by annealing at 1250℃. New types of defects in 15.24 cm diameter and 20.32 cm diameter Czochralski silicon crystals were found after SCI cleaning. It was suggested that these defects became during during high temperature annealing and disappear by annealing at 1250 ° C.