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介绍了几种常用的干法刻蚀技术的机理，重点介绍了离子束刻蚀的基本原理，给出了５５种不同材料在５００ｅＶ能量１ｍＡ／ｃｍ２束流密度条件下的刻蚀速率，并给出了刻蚀速率随束流能量和束流密度增加而增加的试验结果和实际图形刻蚀的扫描电镜分析结果，对有关问题进行了讨论。
The mechanism of several commonly used dry etching techniques is introduced. The basic principle of ion beam etching is introduced. The etching rates of 55 different materials under the beam current density of 500eV and 1mA / cm2 are given. The results of the experiment that the etching rate increases with the increase of the beam energy and the beam current density and the result of scanning electron microscopy of the actual pattern etching are also discussed.