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离子束溅射刻蚀、离子刻蚀、离子铣以及离子磨削等实属同一概念。离子束能刻蚀任何材料并能加工精细的几何图形。其刻蚀精度仅取决于光刻的水平及其掩膜的性质。目前,离子束溅射刻蚀已能加工出80埃的线条,而化学腐蚀所能达到的极限则为2微米线宽,且有边界轮廓模糊不清、钻蚀、沾污等缺点。离子束溅射刻蚀最突出的优点是窗壁的角度可以控制。这是通过选择入射角度和旋转靶子来完成的,这对金属化覆盖台阶来说极为重要。例如,对镍铁合金,当离子束以0～15度的入射角射到旋转着的靶板时可刻蚀出近于垂直的壁,而其它相关的刻蚀工艺都不能控制窗壁的角度。
Ion beam sputtering etching, ion etching, ion milling and ion milling are the same concept. Ion beams can etch any material and process fine geometries. Its etching accuracy depends only on the level of lithography and the nature of its mask. Currently, ion beam sputter etching has been able to process lines of 80 angstroms, while chemical etching can reach the limit of 2 microns line width, with borderline ambiguities, erosion, contamination and other shortcomings. Ion beam sputter etching the most prominent advantage is the window wall angle can be controlled. This is done by selecting the angle of incidence and rotating the target, which is extremely important for metallizing the steps. For example, for a nickel-iron alloy, a nearly vertical wall can be etched when the ion beam impinges on the rotating target at an incident angle of 0-15 degrees, and none of the other related etching processes control the angle of the window wall.