一、引言近两年来,在几篇资料中业已讨论了有意义的 n 型 GaAs 肖特基势垒的电容性能。威廉斯观察了在施加于二极管的偏压变为更负值之后电容与时间的关系。这个效应解释为这一时同与来自于耗尽层深杂质中心处电子的发射有关。根据光注入电子电流的平衡电容及时间的变化,他推导出深杂质中心的能量、电子俘获截面和密度。他的所有计算都假设了 C~(-2)和 V I. INTRODUCTION In the last two years, the capacitance properties of a meaningful n-type GaAs Schottky barrier have been discussed in several sources. Williams observed the capacitance versus time after the bias applied to the diode became more negative. This effect is explained by the fact that this time is related to the emission of electrons from the deep impurity center of the depleted layer. He deduced the energy, electron capture cross section, and density of the deep impurity center based on the balancing capacitance and time of photoinjection electron current. All his calculations assume C ~ (-2) and V