据报导,以碰撞雪崩二极管模式工作的砷化镓二极管可工作在 J 或 X 波段。在 P-N 结器件中,刘氏在16千兆赫下获得1瓦的脉冲功率;奇姆和阿姆斯特朗报导,在11.1千兆赫下获得500毫瓦的连续波动率,效率为11.5%。李氏和奇姆利用砷化镓肖特基势垒碰撞雪崩二极管结构,在9千兆赫下获得2瓦的连续波功率,效率为9%。 It has been reported that gallium arsenide diodes operating in the avalanche-avalanche diode mode can operate in the J or X band. In the P-N junction device, Liu got 1 watt of pulsed power at 16 gigahertz; Shim and Armstrong reported a continuous gain of 500 milliwatts at 11.1 GHz with an efficiency of 11.5%. Lee and Shimmer collided with a gallium arsenide Schottky barrier avalanche diode structure, at 9 GHz to obtain 2 watts of continuous wave power, efficiency of 9%.