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已研制了GaAs合金型的肖特基势垒接触。用蒸发含有镍(5～20原子％)的鉑膜和GaAs衬底之间的固—固反应来形成合金层。肖特基势垒接触的电性质和冶金性质是:(1)φ_(BO)=0.95±0.01电子伏和n=1.04±0.02,(2)在高温时接触是稳定的,(3)没有沾污的麻烦问题和氧化物的介入层,(4)没有观察到的由于鉑和镍扩散所引起的不良效应,(5)在介面形成如GaPt,Ga_2Pt和PtAs_2的合金,(6)这些合金型接触对于肖特基势垒器件是有希望的。
A GaAs alloy type Schottky barrier contact has been developed. The alloy layer is formed by a solid-solid reaction between a platinum film and a GaAs substrate that is evaporated containing nickel (5 to 20 atom%). The electrical and metallurgical properties of Schottky barrier contacts are: (1) φ BO = 0.95 ± 0.01 electron volts and n = 1.04 ± 0.02, (2) the contact is stable at high temperature, (3) there is no contact (4) No adverse effects due to platinum and nickel diffusion are observed, (5) An alloy such as GaPt, Ga 2 Pt and PtAs 2 is formed at the interface, (6) These alloy types Contact is promising for Schottky barrier devices.