论文部分内容阅读
三、扩散和氧化1.菲克定律扩散和氧化是集成电路制造的基本工艺.集成电路制造中的扩散,是先在硅表面淀积一层所需要的杂质原子薄层,通常叫预淀积.在热场作用下杂质原子沿浓度梯度方向扩散.扩散的菲克第一定律为粒子流量f与浓度梯度成正比f=-D((?)N/(?)x)式中比例常数D叫做扩散系数,N为杂质原子浓度,x为到表面的距离.菲克第二定律是用连续自变量从第一定律推导出来的.设距离为dx的两个面间的粒子数为Ndx,N为时间t和距离的函数,则此区粒子累积率可写成:
Third, the proliferation and oxidation 1. Fick’s Law Diffusion and oxidation is the basic process of integrated circuit manufacturing. Diffusion in the manufacture of integrated circuits, is to deposit a layer of impurities on the silicon surface layer of atomic thin, usually called pre-deposition . Under the action of the thermal field, the impurity atoms diffuse along the direction of the concentration gradient. The first law of diffusion is that the particle flux f is proportional to the concentration gradient f = -D ((?) N / (?) X) Is called the diffusion coefficient, N is the impurity atomic concentration, and x is the distance to the surface. The second law of Fick is deduced from the first law by a continuous argument. Let the distance dx between the two faces be Ndx, N is a function of time t and distance, the particle accumulation rate in this area can be written as: