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一、引 言 硅片上厚度在6A|°-50A|°范围内的超薄氧化层的性质已引起人们的广泛注意.因为它不仅在一些半导体器件制造中起关键作用,而且对Si-SiO_2界面性质的研究也有重要意义. 用椭偏仪测量50A|°以下的氧化层厚度,除了仪器的灵敏度外,尚需解决数据处理问题.在此厚度范围内椭偏参数ψ非常接近,因此不能像厚膜那样,依据ψ、△同时确定膜的折射率和厚度.我们的计算结果表明,在10A|°以内及在20A|°-50A|°范围内,由折射率
I. INTRODUCTION The properties of ultrathin oxide on silicon wafers with a thickness in the range of 6A | -50A | ° have drawn much attention because they not only play a key role in the fabrication of some semiconductor devices, In addition to the sensitivity of the instrument, data processing problems need to be addressed, and the ellipsometric parameter ψ is very close to this thickness and therefore can not be the same as the thick Film, the refractive index and the thickness of the film are simultaneously determined according to ψ, Δ, and our calculation results show that within the range of 10A | ° and in the range of 20A | -50A | °, the refractive index