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一、引言随着光纤通讯和集成光学的飞速发展,GaAs—Ga_(1-x)Al_xAs液相外延技术也得到了很大的进展,并成功地研制出了寿命六百万小时的半导体激光器及种类繁多的集成光学器件。在液相外延的过程中,首先展现在人们面前的是外延片表面生长的情况,光滑平整的表面形貌不仅增加了外延片的美观,给制管工艺〈诸如光刻、扩散、掩膜、蒸发等〉带来了很大方便,而且生长层表面的好坏也直接反映着外延片内部的生长情况。一般说来,表面形貌好的外延片内部生长也好,反之,表面形貌生长不好的,外延片内部生长也不好。判断表面生长情况好坏可以直接观察其表面有无析出物,生长台
I. INTRODUCTION With the rapid development of optical fiber communication and integrated optics, the technology of GaAs-Ga 1-x Al_xAs liquid phase epitaxy has also been greatly improved and the semiconductor laser with a lifetime of 6 million hours has been successfully developed. A wide range of integrated optics. In the process of liquid phase epitaxy, the first thing that people are seeing is the growth of the surface of the epitaxial wafer. The smooth and flat surface morphology not only increases the aesthetic appearance of the epitaxial wafer, but also improves the quality of the fabrication process such as lithography, diffusion, masking, Evaporation, etc.> bring great convenience, and the growth of the surface layer is also a direct reflection of the epitaxial growth within the film. In general, good surface morphology of the epitaxial wafer growth Ye Hao, on the contrary, the surface morphology of poor growth, the growth of the internal growth of the wafer is not good. Determine the surface growth is good or bad can be directly observed on the surface of the precipitate, the growth station