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本文报道了GaAs(100)衬底上CdTe外延膜的喇曼光谱,并提出利用实验上测得的CdTe外延膜LO声子峰宽度和位置来确定外延膜应变的处理方法.结果表明,对于厚度达2.5 μm的 CdTe外延膜,仍有应变存在,且应变大小与样品生长条件有关.从喇曼谱的分析中还提取了样品质量的有用信息其质量分析结果得到X射线双晶衍射和扫描电子显微镜表面形貌分析结果的支持.
Raman spectra of CdTe epitaxial films on GaAs (100) substrates are reported in this paper and the treatment method of epitaxial film strain is proposed to determine the epitaxial film strain using the measured LO phonon peak widths and locations on the CdTe epitaxial films. The results show that for the thickness Up to 2.5 μm CdTe epitaxial film, there is still strain, and the strain size is related to the growth conditions of samples.The useful information of the sample quality is also extracted from the analysis of Raman spectrum.The results of mass spectrometry have been obtained by X-ray double crystal diffraction and scanning electron Support of microscope surface topography results.