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用氮离子注入的方法制备了4H-SiC欧姆接触层。注入层的离子浓度分布由蒙特卡罗分析软件 TRIM模拟提取,Si面4H-SiC-Ni/Cr合金欧姆接触的特性由传输线方法结构进行了测量,得到氮离子注入层的方块电阻Rsh为30 kW/square, Ni/Cr合金与离子注入层的欧姆接触电阻rc为7.1×10-4 Wcm2。
4H-SiC ohmic contact layer was prepared by nitrogen ion implantation. The ion concentration distribution of the implanted layer was extracted by Monte Carlo simulation software TRIM. The ohmic contact characteristics of 4H-SiC-Ni / Cr alloy on the Si surface were measured by the transmission line method. The Rsh of the nitrogen ion implanted layer was 30 kW / square, and the ohmic contact resistance rc between the Ni / Cr alloy and the ion-implanted layer is 7.1 × 10 -4 W cm 2.