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本文报道了一种三维(简写为3D)CMOS集成电路制造工艺及其性能.在P型单晶硅片上制作NMOS晶体管,在连续氩离子激光再结晶的N型多晶硅膜上制作PMOS晶体管,这两层器件之间用 LPCVD生长的二氧化硅层作隔离.已制成5μm沟道长度的9级3D-CMOS环形振荡器,每级门的延迟时间为2.7ns.
In this paper, a fabrication process and performance of a three-dimensional (abbreviated as 3D) CMOS integrated circuit is described. An NMOS transistor is fabricated on a P-type monocrystalline silicon wafer and a PMOS transistor is fabricated on an N-type polycrystalline silicon film recrystallized by continuous argon ion laser recrystallization The LPCVD-grown silicon dioxide layer is used as a barrier between the two devices and a 9-level 3D-CMOS ring oscillator of 5μm channel length has been fabricated with a 2.7ns delay per stage.