半导体材料内部的一致性是实现微器件功能的重要保证。为实现半导体材料微体缺陷的无损、高效、和准确检测 ,在研究广义 L orenz- Mie理论的基础上 ,通过将散射光分布分析引入到检测当中 ,提出了对近红外激光散射信号探测和缺陷大小特征的判据 ,来检测半导体材料缺陷的方法。介绍了检测的基本原理和理论模型 ,以及基于这一构想的全自动检测系统的实现方法 ,并提出了微缺陷检测的判据。对一组 Ga As样品进行了实验研究 ,证明了该方法的可行性 Consistency within the semiconductor material is an important guarantee for the function of the micro-device. In order to realize the non-destructive, efficient and accurate detection of microscopic defects in semiconductor materials, based on the study of the generalized Lorenz-Mie theory, the scattering light distribution analysis is introduced into the detection of the near-infrared laser scattering signal detection and defects Size characteristics of the criteria to detect semiconductor material defects. The basic theory and theoretical model of detection are introduced, and the realization method of automatic detection system based on this concept is introduced. The criterion of micro-defect detection is also put forward. An experimental study on a group of GaAs samples proves the feasibility of this method