本文采用玻尔兹曼变换法求解高浓度下的砷和硼的扩散方程,并以高斯分布作为离子注入的初始分布,得到了杂质在退火过程中再分布的新的解析模型.还得到了结深、峰值浓度等随退火条件变化的解析表达式.这些结果对MOS和双极器件、电路的工艺设计有实际参考价值.也能用来改进 SUPREM工艺模拟中所采用的模型. In this paper, the Boltzmann transform method is used to solve the diffusion equation of arsenic and boron at high concentration, and the Gaussian distribution is used as the initial distribution of ion implantation. A new analytic model of the redistribution of impurities in the annealing process is obtained. , Peak concentration and other analytical expressions that change with the annealing conditions.These results have practical reference value for the process design of MOS and bipolar devices and circuits.It can also be used to improve the model used in SUPREM process simulation.