论文部分内容阅读
分别在n型半绝缘Si、弱n (n )以及强n (n+ )型Si片 (1 0 0 )面上用射频磁控反应溅射法和直流磁控反应溅射法制备了p型ZnO薄膜以及ZnO同质p n结。其中在生长p型ZnO时 ,反应室中通以过量的氧。对上述p型和n型ZnO薄膜进行了X射线衍射测量 ,在 34.1°附近得到了 0 .3°左右半峰全宽的ZnO(0 0 2 )衍射峰。ZnO薄膜的原子力显微镜图像上可见六角型的自组装结构。阴极射线荧光的测量显示了位于 390nm的紫外特征峰。用I V特性仪测量了上述ZnOp n结原型器件的I V电学输运曲线 ,其正向显示了约为 1 .1V的阈值 ,与日美科研人员用直流溅射和扩散法制备的ZnOp n结相似 ,但反向特性明显优于他们的
The p-type ZnO thin films were deposited on n-type semi-insulating Si, weak n (n) and strong n (n +) Si wafers (100) by RF magnetron reactive sputtering and DC magnetron reactive sputtering Thin film and ZnO pn junction homogeneity. In the growth of p-type ZnO, the reaction chamber with excess oxygen. The p-type and n-type ZnO thin films were subjected to X-ray diffraction measurement to obtain a diffraction peak of ZnO (0 0 2) with a full width at half maximum of about 0.3 in the vicinity of 34.1 °. Atomic force microscopy images of ZnO thin films can be seen hexagonal self-assembled structure. Measurement of cathodoluminescence fluorescence shows a characteristic UV peak at 390 nm. The IV electrical conductivity curve of the above ZnOp n junction prototype device was measured by an IV characteristics analyzer, which showed a positive threshold of about 1.1V. Similar to the ZnOp n junction prepared by Japanese and American researchers by DC sputtering and diffusion , But the reverse characteristics significantly better than them