论文部分内容阅读
以同步辐射真空紫外光 (1 95nm)为激发源 ,在低温下观察到Si基衬底上ZnO薄膜的发光有三种紫外发射 ,其峰值波长分别为 380 ,36 9.5 ,2 90nm。它们各自具有不同的衰减时间和不同的温度依赖关系 ,但其激发谱相同。强激发带不在近紫外区 ,而在真空紫外区 (1 0 0～ 2 0 0nm) ,可能源于ZnO的下价带 (Zn3d组态 )电子的激发。对三种紫外发射的来源作了分析讨论
Under the synchronous irradiation of vacuum ultraviolet (1 95nm), the UV emission of ZnO thin films on Si substrate was observed at low temperature. The peak wavelengths were 380, 36 9.5 and 290 nm respectively. They each have different decay times and different temperature dependencies, but their excitation spectra are the same. The strong excitation band is not in the near ultraviolet region, but in the vacuum ultraviolet region (100 ~ 2000 nm), it may originate from the excitation of electrons in the lower valence band (Zn3d configuration) of ZnO. The sources of the three UV emissions were analyzed and discussed