论文部分内容阅读
Ⅲ族氮化物半导体具有宽的直接带隙,很强的极化电场,优异的物理特性,是发展高频、高温、高功率电子器件和光电子器件的优选材料.同时,Ⅲ族氮化物半导体有很长的电子自旋弛豫时间以及很高的居里温度,也成为近年来半导体自旋电子学研究的重要材料体系之一.本文介绍了用量子输运和自旋光电流方法对GaN基异质结构中载流子的量子输运和自旋性质的研究进展.对Ⅲ族氮化物半导体中的能带结构,子带占据和散射,自旋分裂及自旋轨道耦合机制等进行了讨论.
Group III nitride semiconductors have wide direct bandgap, strong polarized electric field and excellent physical properties, and are the preferred materials for developing high-frequency, high-temperature, high-power electronic devices and optoelectronic devices. Meanwhile, group III nitride semiconductors have Long electron spin relaxation time and high Curie temperature have also become one of the most important material systems for semiconductor spintronics in recent years.In this paper, Recent Advances in Quantum Transport and Spintronic Properties of Carrier in Heterostructure: Discussion on Band Structure, Band Occupancy and Scattering, Spin-Splitting, and Spin Orbit Coupling Mechanisms in Group III Nitride Semiconductors .