EXTRINSIC相关论文
Effects of Photosystem Ⅱ (PS Ⅱ) extrinsic polypeptides of oxygen-evolving complex and manganese clusters on PS Ⅱ carb......
The registration of point cloud is important for large object measurement.A measurement method for coordinate system tra......
The number of glucocorticoid receptors (GCR) in peripheral leukocytes was determined by radioligand-binding assay in ext......
Chronic abdominal pain accompanying intestinal inflammation emerges from the hyperresponsiveness of neuronal,immune and ......
In this paper standard techniques for characterization of HgCdTe liquid phase epitaxial layers (LPE) were presented. The......
This paper investigates joint design and optimization of both low density parity check (LDPC) codes and M-algorithm base......
A novel extrinsic fiber-optic Fabry-Perot interferometric strain sensor system is demonstrated based on the simultaneous......
Organic Light Emitting Devices (OLED) have attracted much attention recently, for their applications in futureFlat Pane......
TURBO DECODER USING LOCAL SUBSIDIARY MAXIMUM LIKELIHOOD DECODING IN PRIOR ESTIMATION OF THE EXTRINSI
A new technique for turbo decoder is proposed by using a local subsidiary maximum likelihood decoding and a probability......
An accurate and broad|band method for heterojunction bipolar transistors (HBT) small|signal model parameters|extraction ......
Doxorubicin(Dox) is a major anticancer chemotherapeutic agent.However,it causes cardiomyopathy due to the side effect of......
A novel memory efficient path metric update is proposed for Maximum A Posteriori(MAP) decoder of turbo codes to reduce t......
High frequency modeling of quantum-well(QW) laser diodes for optoelectronic integrated circuit(OEIC) design is discussed......
Influence of annealing conditions on impurity species in arsenic-doped HgCdTe grown by molecular bea
Based on our previous work,the influence of annealing conditions on impurity species in in-situ arsenic (As)-doped Hg 1 ......
This paper describes the first domestic Ku-band power AlGaN/GaN HEMT fabricated on a sapphire substrate. The device with......
Fabrication and characterization of high performance AlGaN/GaN HEMTs on sapphire with silicon nitrid
AlGaN/GaN high electron mobility transistors(HEMTs)with high performance were fabricated and characterized.A variety of ......
We present an AlInN/AlN/GaN MOS-HEMT with a 3 nm ultra-thin atomic layer deposition (ALD) Al 2 O 3 dielectric layer and ......
Characteristics of anomalous Hall effect in spin-polarized two-dimensional electron gases in the pre
The various competing contributions to the anomalous Hall effect in spin-polarized two-dimensional electron gases in the......
Extrinsic and intrinsic causes of the electrical degradation of AlGaN/GaN high electron mobility tra
Electrical stress experiments under different bias configurations for AlGaN/GaN high electron mobility transistors were ......
he complex oxide Dy10W2O21 was synthesized by a solid-state reaction and isolated in cubic symmetry by an X-ray diffract......
AlN/GaN high-electron-mobility transistors(HEMTs)on SiC substrates were fabricated by metalorganic chemical vapor deposi......
V-gate GaN high-electron-mobility transistors (HEMTs) are fabricated and investigated systematically. A V-shaped recess ......
83-nm T-shaped gate InP-based In_(0.52)Al_(0.48)As/In_(0.65)Ga_(0.35)As pseudomorphic high electron mobility transistors......
90-nm T-shaped gate InP-based In_(0.52)Al_(0.48)As/In_(0.6)Ga_(0.4)As pseudomorphic high electron mobility transistors w......
A novel and accurate method is proposed to extract the intrinsic elements of the GaN high-electron-mobility transistor(H......
f_T=260 GHz and f_(max)=607 GHz of 100-nm-gate In_(0.52)Al_(0.48)As/In_(0.7)Ga_(0.3)As HEMTs with G_
The 100-nm T-gate InP-based InAlAs/InGaAs high electron mobility transistors(HEMTs) with the width of 2 × 50 μm and so......
A novel 4H-SiC BJT of high current gain with a suppressing surface traps effect has been proposed. It is effective to im......
Fabrication of InAlGaN/GaN High Electron Mobility Transistors on Sapphire Substrates by Pulsed Metal
Nearly lattice-matched InAlGaN/GaN heterostructure is grown on sapphire substrates by pulsed metal organic chemical vapo......
Improved high-frequency equivalent circuit model based on distributed effects for SiGe HBTs with CBE
In this paper, we present an improved high-frequency equivalent circuit for SiGe heterojunction bipolar transistors(HBTs......
—This paper details experiments undertaken in the UK Coastal Research Facility(CRF)at Hy-draulics Research(HR).Wallingf......
Laser-induced damage often determines the effective lifetime of an optic in large high-energy laser facilities.We presen......
High-Frequency AlGaN/GaN High-Electron-Mobility Transistors with Regrown Ohmic Contacts by Metal-Org
Nonalloyed ohmic contacts regrown by metal-organic chemical vapor deposition are performed on AlGaN/GaN high-electron-mo......
High-Performance In_(0.23)Ga_(0.77)As Channel MOSFETs with High Current Ratio I_(on)/I_(off) Grown o
We demonstrate high-performance In_(0.23) Ga_(0.77) As channel metal-oxide-semiconductor Seld-effect transistors(MOSFETs......
该文主要论述在P-HPF编译器中对EXTRINSIC机制的支持、实现以及将EXTRINSIC机制应用于HPF调并行线性代数算法包(ScaLAPACK)中.ScaL......
Enhanced Low-field Magnetoresistence in the Absence of Mn Content in Polycrystalline La_(0.67)Ca_(0.
Magnetic and electrical transport properties of the La 0.67 Ca 0.33 Mn1–x O3 (x=0-0.16),which were prepared by the sol-......
A new safety culture model is constructed and is applied to analyze the correlations between safety culture and SMS.On t......
TheintroductionofWesternliterarytheoriessincethebeginningofthenewera,whichhasbeenveryhelpfulforenlargingourhorizon,hasal......
AIM To study the colon innervation of trisomy16 mouse, an animal model for Downssyndrome, and the expression of protein......
Several major factors are known to contribute to CNS axon regenerative failure after injury,including reduced intrinsic ......
Applying Mencius decision-making thought and combing dialectical theories such as the relationship between intrinsic and......
Axon regeneration in the CNS is largely unsuccessful due to excess inhibitory extrinsic factors within lesion sites toge......
Effect of large-angle grain boundaries on the microwave surface resistance of YBa_2Cu_3O_7 thin film
Since the discovery of high-temperature superconductor YBa_2Cu_3O_7(YBCO) people aremuch concerned about its microwave ......
To understand the prevalence,consequences and risk factors of falls among urban community-dwelling elderly in Beijing.Me......
Taking the famous genetic toggle switch as an example,we numerically investigated the effect of noise on bistability.We ......
Motivation of learning falls into two categories in psychology, one is intrinsic motivation and the other is extrinsic m......
Stable transfection of extrinsic Smac gene enhances apoptosis-inducing effects of chemotherapeutic d
AIM: To explore the feasibility of enhancing apoptosis-inducing effects of chemotherapeutic drugs on human gastric cance......
Self-energy and interaction energy of stacking fault in fcc metals calculated by embedded-atom metho
The stacking fault energies of five fcc metals (Cu, Ag, Au, Ni and Al) with various quan-tivalences have been calculated......
