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本文报道了用低能大面积电子束处理注砷硅片的实验结果。由四探针和背散射、沟道效应测量结果表明,用本方法退火的样品具有电激活率高和砷原子再分布小的优点。
This paper reports the experimental results of arsenic silicon wafers treated with low energy large area electron beam. The results of channel effect measurements by four probes and backscattering show that the samples annealed by this method have the advantages of high electrical activation rate and small redistribution of arsenic atoms.