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自对准工艺可以降低GaAs FET的源漏电阻,提高跨导和截止频率.难熔金属硅化物WSi_x可用于自对准工艺.为得到较好的与GaAs接触的肖特基势垒特性和高温稳定性,本文较详细地实验研究了影响WSi_x与GaAs接触特性的诸因素,指出,除表面态外,主要有三种因素使WSi_x与GaAs之间的肖特基势垒二极管(SBD)性能变差:(1)Si在WSi_x中的含量;(2)界面情况——存在于GaAs表面的天然氧化层、退火后的互扩散和界面上生成的化合物;(3)溅射淀积WSi_x薄膜前,GaAs表面薄层的晶格状态.第三种因素对SBD性能的影响是在最近的实验中得到的.
The self-alignment process can reduce the source-drain resistance of the GaAs FET and increase the transconductance and the cut-off frequency.The refractory metal silicide WSi_x can be used in the self-aligned process.In order to get a better Schottky barrier characteristic in contact with GaAs and high temperature In this paper, the factors influencing the contact characteristics between WSi_x and GaAs are experimentally studied in detail. It is pointed out that there are three main factors that affect the Schottky barrier diode (SBD) performance between WSi_x and GaAs, except for the surface state : (1) content of Si in WSi_x; (2) interface condition - natural oxide layer existing on the surface of GaAs, interdiffusion after annealing and compound formed on the interface; (3) before the WSi_x film is sputtered and deposited, The lattice state of the thin GaAs surface The influence of the third factor on the performance of SBD was obtained in a recent experiment.