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利用金属有机气相外延(MOVPE)技术生长了具有不同AlGaN表面坑状缺陷和GaN缓冲层位错缺陷密度的AlGaN/GaN高电子迁移率晶体管(HEMT)样品,并对比研究了两种缺陷对器件栅、漏延迟电流崩塌效应的影响.栅延迟测试表明,AlGaN表面坑状缺陷会引起栅延迟电流崩塌效应和源漏电阻的增加,而且表面坑状缺陷越多,栅延迟电流崩塌程度和源漏电阻的增加越明显.漏延迟测试显示,AlGaN表面坑状缺陷对漏延迟电流崩塌影响不大,而GaN缓冲层位错缺陷主要影响漏延迟电流崩塌.研究结果表明,AlGaN表面坑状缺陷和GaN缓冲层位错缺陷分别是引起AlGaN/GaN HEMT栅、漏延迟电流崩塌的电子陷阱来源之一.
AlGaN / GaN high electron mobility transistor (HEMT) samples with different AlGaN surface pit defects and GaN buffer layer dislocation defect density were grown by metal-organic vapor phase epitaxy (MOVPE) technique. The effects of two defects on the device gate , And the effects of drain-delay current collapse.The gate delay tests show that the pit-like defects in AlGaN can cause the gate-delay current collapse effect and the increase of source-drain resistance, and the more surface crater defects, the degree of gate delay current collapse and the source-drain resistance The more obvious the increase is.The leakage delay test shows that the pit-like defects on the surface of AlGaN have little effect on the drain-current collapse, but the dislocation defects in GaN buffer layer mainly affect the drain-delay current collapse.The results show that the pit- Layer dislocation defects are one of the sources of electron traps that cause AlGaN / GaN HEMT gate and drain delay current collapse, respectively.