本文重点谈一谈有关把MIS结构用于光探测的研究过程中所得到的一些结果。这种探测包括可见光及红外。文章在扼要地提到MIS结构受到光照后所引起的物理现象之后,叙述了这些现象怎样用到锑化铟红外探测上去,以及把扩展的MOS结构用作光扫描象读出。在MIS电容上加一个扩散二极管或整流二极管就可增加光电探测的可能性,还谈到了对这些器件所进行的研究和研究工作日 This article focuses on some of the results of the research on the use of MIS structures for light detection. This detection includes visible light and infrared. After a brief description of the physical phenomena caused by the illumination of MIS structures, the article describes how these phenomena can be detected using indium antimonide (IR) and the extended MOS structure as an optical scanning readout. The addition of a diffusion diode or rectifier diode to the MIS capacitor increases the potential for photodetection, and also addresses research and study days on these devices