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本文报道了一种形成ＳＩＭＯＸ结构的等离子体浸没离子注入（ＰＩＩＩ）的新技术．与传统的离子注入相比，这种新技术具有高离子束流，大面积离子注入，极短的注入时间和低成本等优点．实验中，衬底硅片浸没在高离子密度的氧的等离子体中．在衬底所加的负高压的作用下，氧离子直接注入硅片之中．我们研究了ＰＩＩＩ的工艺条件，用ＰＩＩＩ制得了具有２０到５０ｎｍ厚的顶层硅层和２０到５０ｎｍ厚的氧化硅埋层的超薄ＳＩＭＯＸ硅片，并用ＲＢＳ、ＸＴＥＭ等技术对样品进行了测试．
This paper reports a new technique for plasma immersion ion implantation (PIII) to form a SIMOX structure. Compared with the traditional ion implantation, this new technology has the advantages of high ion beam, large area ion implantation, very short injection time and low cost. In the experiment, the substrate wafer was immersed in a plasma of high ion density oxygen. Under the action of the negative high voltage applied to the substrate, oxygen ions are directly implanted into the silicon wafer. We studied the process conditions of PIII, using PIII to produce ultra-thin SIMOX silicon wafer with 20-50nm thick top silicon layer and 20-50nm thick silicon oxide buried layer, and the samples were tested by RBS, XTEM and other techniques.