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该文报导了在有ＹＳＺ缓冲层覆盖的Ｓｉ衬底上偏靶磁控溅射ＢＳＣＣＯ超导薄膜的工艺条件，给出了利用扫描电子显微镜（ＳＥＭ）、高分辨率透射电子显微镜（ＨＲＴＥＭ）和原子力显微镜（ＡＦＭ）对ＢＳＣＣＯ膜中几种缺陷的观察结果，并讨论了为预防和减少缺陷而调整的超导膜的生长条件，提出了ＹＳＺ／Ｓｉ上ＢＳＣＣＯ的分形生长现象．
This paper reports the fabrication conditions of magnetron sputtered BSCCO superconducting thin films on YSZ buffer-covered Si substrates. The scanning electron microscopy (SEM), high resolution transmission electron microscopy (HRTEM) and Atomic force microscopy (AFM) BSCCO film observed several defects, and discussed to prevent and reduce the defects of the superconducting film to adjust the growth conditions, put forward on the YSZ / Si BSCCO fractal growth phenomenon.