论文部分内容阅读
采用射频磁控反应溅射法在Si(111)和Si(100)两种衬底上制备了AlN薄膜,用X射线衍射(XRD)对AlN薄膜进行了表征,研究了衬底Si(111)、Si(100)取向以及N2百分比对AlN(002)薄膜c-轴择优取向的影响。实验结果表明,Si(100)较适合生长c-轴择优取向AlN薄膜,而且N2百分比为40%时,AlN薄膜的c-轴取向最好,具有尖锐的XRD峰,此时对应于AlN(002)晶向。计算了(002)取向AlN和两种Si衬底的失配度,Si(111)面与AlN(002)面可归结为正三角形晶系之间的匹配,失配度为23.5%;而Si(100)面与AlN(002)面可归结为正方形晶系与正三角形晶系之间的匹配,失配度为0.8%,可以认为完全共格。理论分析和实验结果相符。
AlN thin films were deposited on Si (111) and Si (100) substrates by RF magnetron reactive sputtering. The AlN films were characterized by X-ray diffraction (XRD) , Si (100) orientation and N2 percentage on the c-axis preferred orientation of AlN (002) films were investigated. The experimental results show that Si (100) is more suitable for the growth of c-axis preferred orientation AlN films, and the percentage of N2 is 40%, the c-axis orientation of AlN films is the best with sharp XRD peaks corresponding to AlN (002 Crystal orientation. The mismatch between (002) oriented AlN and the two Si substrates was calculated. The mismatch between the Si (111) and AlN (002) planes can be attributed to the regular triangle system with a mismatch degree of 23.5% The (100) plane and the AlN (002) plane can be attributed to the matching between the tetragonal system and the equilateral triangle system with a mismatch degree of 0.8%, which is considered to be completely coherent. The theoretical analysis is consistent with the experimental results.