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由Ｇａ－Ｉｎ－Ａｓ三元系的热力学分析结果，计算了ＧａＡｓ－ＩｎＡｓ赝二元系相图，讨论了由外延法生成这类化合物时，外延产物发生的晶格弹性形变对ＧａＡｓ和ＩｎＡｓ互溶度的影响。计算结果表明，晶格弹性形变有使溶解度间隙区缩小，甚至消失的效应。
The phase diagram of GaAs-InAs pseudo-binary system is calculated from the thermodynamic analysis results of Ga-In-As ternary system. The formation of GaAs-InAs pseudo-binary system phase diagram is discussed. Degree of influence. The calculated results show that the elastic deformation of the lattice has the effect of reducing or even disappearing the solubility gap region.