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制备高临界电流J_c的高温超导线材与带材是高温超导走向强电应用的重要课题.与Bi系及T1系相比,YBa_2Cu_3O_(7-δ)(YBCO)的不可逆线低,在液氮温区仍有很强的钉扎力.YBa_2Cu_3O_(7-δ)已在单晶基片上生长出很高质量的薄膜,J.高达(5～6)×10~6A/cm~2.但是单晶基底对强电应用是不利的,为了使YBCO薄膜的优良性能应用于带材,必须把YBCO沉积到可弯曲并且便宜的金属基底上.为防止金属基底与YBCO之间的扩散反应,用钇稳定氧化锆(YSZ)做缓冲层.但是用这种薄膜沉积法得到的带材由于不是外延生长,J_c为 10~3～10~4A/cm~2.近来人们用离子束辅助沉积法(IBAD)在金属基底上得到具有平面内织构的YSZ缓冲层,并在其上外延生长出J_c达到 10~6A/cm~2的YBCO薄膜,这使得IBAD薄膜法成
The preparation of high-temperature superconducting wires and ribbons with high critical current J_c is an important issue in the field of high-temperature superconductivity. Compared with Bi-series and T1-series, the irreversible line of YBa2Cu3O_ (7-δ) (YBCO) There is still a strong pinning force in the nitrogen temperature zone .YBa_2Cu_3O_ (7-δ) has grown very high quality thin film on a single crystal substrate, up to (5 ~ 6) × 10 ~ 6A / cm ~ 2. Single-crystal substrates are detrimental to high-current applications and YBCO must be deposited onto flexible and inexpensive metal substrates in order to apply the excellent properties of YBCO films to tapes.To prevent the diffusion reaction between the metal substrate and YBCO, Yttrium stabilized zirconia (YSZ) buffer layer.But the film obtained by this thin film deposition method is not due to epitaxial growth, J_c 10 ~ 3 ~ 10 ~ 4 A / cm ~ 2. Recently people use the ion beam assisted deposition method ( IBAD) to obtain YSZ buffer layer with in-plane texture on a metal substrate and YBCO film with J_c reaching 10-6A / cm ~ 2 is epitaxially grown thereon, which makes IBAD film method