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本文报道了用含氢非晶硅作为台面型硅变容管钝化新方法.这种方法采用SuO_2+α-SiH双层钝化膜结构.在α-Si:H淀积过程中,严格掌握衬底温度,采用相应的退火条件,以确保钝化膜的必要的稳定性.这种钝化方法能明显地降低反向漏电流,比单层SiO_2钝化可使器件成品率提高一倍左右.器件经过高温、潮湿、高温电老化、常温存放等环境试验,显示了具有高可靠性与稳定性.本文对于用SiO_2+α-Si:H的钝化机理也作了初步的探讨.
In this paper, a new method of passivation of mesoporous silicon varactors with hydrogen-containing amorphous silicon is reported. This method uses a double passivation film structure of SuO_2 + α-SiH. During the deposition of α-Si: H, Substrate temperature, using the appropriate annealing conditions to ensure the necessary stability of passivation film. This passivation method can significantly reduce the reverse leakage current, single-pass than the single-passivation of silicon devices can yield about double the yield The device has been proved to have high reliability and stability by environmental tests such as high temperature, humidity, high temperature electric aging and storage at ambient temperature. The passivation mechanism of SiO_2 + α-Si: H is also discussed in this paper.