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目前,AlGaN/GaN HEMT因为其具有非常优良的电性能而使得它在微波大功率应用方面极受关注。但其性能一直受到一些因素的限制,之中最主要的便是电流崩塌和击穿电压。本文介绍了使用氮化硅来钝化器件表面以及利用场板结构是抑制这些因素的有效方法。由于钨金属有熔点高的特点,使用钨作为栅极材料,可以显著提高AlGaN/GaN HEMT器件的热稳定性。而肖特基接触又是高功率、高频器件的必要成分,器件的高温稳定性可以实现高品质的肖特基接触。自此来看,使用钨金属作为栅极材料是非常有研究意义的。
At present, AlGaN / GaN HEMT has drawn great attention for microwave power applications because of its excellent electrical properties. But its performance has been limited by a number of factors, the most important of which is the current collapse and breakdown voltage. This article describes the use of silicon nitride to passivate the device surface and the use of field plate structure is an effective way to suppress these factors. Due to the high melting point of tungsten metal, the use of tungsten as the gate material can significantly improve the thermal stability of AlGaN / GaN HEMT devices. Schottky contacts, in turn, are essential components of high-power, high-frequency devices that provide high-quality Schottky contacts for high temperature stability. From this point of view, the use of tungsten as a gate material is of great interest.