半导体巨头IBM公司通过在晶体管流动电流的沟道中加入一层应变锗层,将一个普通晶体管的性能提高了两倍。采用这种技术,不缩小晶体管尺寸,器件的速度却提高了。因此,这种技术是向前迈进了一大步。而且该技术还与常规CMOS技术兼容,因此,可以较快地进入市场。半导体业界长期以来宁 Semiconductor giant IBM Corp. tripled the performance of an ordinary transistor by adding a layer of strained germanium to the channel of the transistor’s current flow. With this technology, the device speed is increased without shrinking the transistor size. Therefore, this technology is a big step forward. And the technology is also compatible with conventional CMOS technology, so you can get to the market faster. The semiconductor industry has long been rather