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本文讨论了非硅微电子学,即在硅衬底上利用非硅沟道材料实现互补型金属氧化物半导体(Complememaw Metal Oxide Semiconductor,CMOS)集成电路的微电子科学与技术.文章重点综述了高迁移率锗与锗锡沟道金属氧化物半导体场效应晶体管(Metal Oxide Semiconductor Field Effect Transistor,MOSFET)以及隧穿场效应晶体管(Tunneling Field Effect Transistor,TFET)的研究进展.锗与锗锡具有比硅(Si)材料高的空穴和电子迁移率且容易实现硅衬底集成,是实现高迁移率沟道CMOS器件的理想备选材料.通过调节锡组分,锗锡材料可实现直接带隙结构,从而获得较高的带间隧穿几率,理论和实验证明可用锗锡实现高性能TFET器件.本文具体分析了锗锡MOSFETs和TFETs器件在材料生长、表面钝化、栅叠层、源漏工程、应变工程及器件可靠性等关键问题.
This paper discusses the non-silicon microelectronics, that is, microelectronics science and technology of Complememaw Metal Oxide Semiconductor (CMOS) integrated circuit using non-silicon channel material on silicon substrate. Research progress on germanium and germanium-tin channel MOSFET (MOSFET) and tunneling field effect transistor (TFET) (Si) materials with high hole and electron mobility and easy integration of silicon substrates, making them ideal candidates for high-mobility channel CMOS devices. By adjusting the tin content, the germanium-tin material enables direct bandgap structures , So as to obtain a higher probability of inter-band tunneling.Through theoretical and experimental studies, it is proved that high-performance TFET devices can be fabricated with germanium-tin.This paper analyzes the effects of germanium-tin-MOSFETs and TFETs on material growth, surface passivation, gate stack, , Strain engineering and device reliability and other key issues.