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对有机/无机光电探测器PTCDA/p-Si样品表面进行AFM测试,结果表明PTCDA呈岛状生长,各岛成圆丘状,岛的分布不均匀,PTCDA层中存在大量缺陷.原因是p-Si(100)衬底的表面原子悬挂键的作用,使硅原子横向移动满足键合需要形成台阶和其他缺陷.得出PTCDA在p-Si基底上的生长模式为:PTCDA首先在缺陷处聚集,形成许多三维岛状的PTCDA晶核,然后在PTCDA离域大π键的作用下,相邻的两层PTCDA分子存在一定程度的交叠,最终形成岛状结构.
The results of AFM test on the surface of PTCDA / p-Si sample of organic / inorganic photodetector show that PTCDA grows island-like, the islands are dome-shaped, the distribution of island is not uniform and there are many defects in PTCDA layer.The reason is that p- The surface atomic dangling bonds of Si (100) substrate make the lateral movement of the silicon atoms satisfy the bonding needs to form steps and other defects. The growth pattern of PTCDA on the p-Si substrate is as follows: PTCDA first aggregates in defects, Many three-dimensional island-shaped PTCDA nuclei are formed. Then, PTCDA molecules are overlapped to some extent by the large π-bond in the PTCDA. Finally, island-like structures are formed.