本文利用化学共沉淀法分别制得Ｚｎ５（ＣＯ３）２（ＯＨ）６ 掺杂Ａｌ（ＯＨ）３、Ｍｇ（ＯＨ）２ 以及Ｚｎ５（ＣＯ３）２（ＯＨ）６ 掺杂Ｓｂ（ＯＨ）３、Ｂｉ（ＯＨ）３、Ｓｎ（ＯＨ）４、Ｃｏ（ＯＨ）３、ＭｎＯ（ＯＨ）２ 两种复合粉体，利用高频等离子体焙解新工艺，制得了纳米ＺｎＯ 及相应的添加剂陶瓷复合粉体．ＴＥＭ 分析结果表明：两种陶瓷复合粉体的粒径均小于１００ｎｍ ．利用前者，通过添加适当的Ａｌ２Ｏ３ 和ＭｇＯ，制备出了电阻率约１０～２０００Ω·ｃｍ ，Ｖ－Ｉ特性较好的ＺｎＯ 线性陶瓷电阻．利用后者，通过适当的杂质配比，在１０００℃左右烧结，可获得致密的瓷体，压敏电压可达４８０Ｖ／ｍ ｍ 左右，非线性系数可达５２． In this paper, Sb (OH) 3 doped with Zn5 (CO3) 2 (OH) 6 doped with Al (OH) 3, Mg (OH) 2 and Zn5 (CO3) 2 (OH) (OH) 3, Sn (OH) 4, Co (OH) 3 and MnO (OH) 2 powders were synthesized by the high-frequency plasma baking method. ZnO nano-powders and corresponding additive ceramic composite powders . The results of TEM analysis show that the particle sizes of the two ceramic powders are less than 100 nm. By using the former, a ZnO linear ceramic resistor with a resistivity of about 10~2000 Ω · cm and a good V-I characteristic was prepared by adding proper Al2O3 and MgO. Using the latter, through the appropriate impurity ratio, sintering at about 1000 ℃, can obtain dense porcelain, the voltage-sensitive voltage up to 480V / m m or so, the nonlinear coefficient of up to 52.