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采用有限差分法求解高界面能各向异性的相场模型,对硅材料晶粒生长过程进行模拟,分析了界面能各向异性强度和过冷度对界面形态演化的影响。结果表明:在高界面能各向异性下,硅晶粒为典型小平面枝晶形态,模拟结果和实验结果吻合。随着界面能各向异性强度的增大,晶粒界面形态由类球状经光滑枝晶向小平面枝晶转变;随着过冷度的增加,晶粒界面形态由类矩形向小平面枝晶转变。Y轴正方向晶粒长度在界面能各向异性强度为0.15和0.1时相当,Y轴正方向晶粒尖端温度在界面能各向异性强度为0.15时略高于界面能各向异性强度为0.1时的值。
The finite difference method was used to solve the phase field model with high interfacial energy anisotropy. The grain growth process of silicon was simulated and the influence of interfacial anisotropy and supercooling on the morphology evolution was analyzed. The results show that the silicon crystal grains are typical faceted dendritic morphology under high interfacial energy anisotropy. The simulation results agree well with the experimental results. With the increase of interfacial anisotropy, the grain boundary morphology changes from quasar-spherical smooth dendrites to faceted dendrites. With the increase of undercooling, the grain boundary morphology changes from quasi-rectangular to small-faceted dendrites change. The grain length in the positive direction of Y-axis is equivalent to that at the interface anisotropy of 0.15 and 0.1, the tip temperature in the positive direction of Y-axis is slightly higher than the interfacial energy anisotropy of 0.15 When the value.