采用近距离升华技术制备了掺杂Cd元素的CdTe多晶薄膜.利用X射线衍射仪和扫描电子显微镜表征其微结构,用霍尔效应测试仪和紫外可见分光光度计分析其电学、光学特性.结果显示,适量的掺杂Cd元素可改善CdTe薄膜晶形,显著提高薄膜的电导特性,由弱的p型电导转变为导电性能良好的n型电导,但对光能隙影响不大. The CdTe-doped CdTe films were prepared by near-sublimation technique and their microstructures were characterized by X-ray diffractometry (XRD) and scanning electron microscopy (SEM). The Hall effect tester and UV-vis spectrophotometer were used to analyze the electrical and optical properties. The results show that the appropriate Cd doping can improve the crystal structure of CdTe thin films and significantly improve the conductivity of the thin films. The weak p type conductivity transforms into n type conductivity with good conductivity, but it has little effect on the light energy gap.