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使用直流磁控反应溅射的工艺方法制备了Ta2O5薄膜MOS型湿敏元件,提出了元件的结构模型,并对其感湿机理进行了讨论.
The Ta2O5 film MOS humidity sensor was prepared by DC magnetron reactive sputtering process. The structural model of the device was proposed and the humidity sensing mechanism was discussed.