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一、前言磷化镓作为Ⅲ—Ⅴ族化合物半导体,已经在发光二极管上加以应用了。磷化镓是一种间接跃迁型材料,在掺入适当发光中心后能发红、橙、黄、绿等多色光。磷化镓是一种良好的、效率高的发光材料,它可以发射出十分接近人眼最大感应波长的光。但由于磷化镓的熔点高(1470℃左右),在此温度下的分解压高(约35大气压),因而,制备大直径的磷化镓单晶是困难的,其设备要求能够耐高温和高压。目前制备磷化镓晶体的工艺主要有以下几种:
First, the preface Gallium phosphide as a III-V compound semiconductor, has been applied to light-emitting diodes. Gallium phosphide is an indirect transition type material that emits red, orange, yellow, green and other multicolored light after being doped with an appropriate luminescent center. Gallium phosphide is a good, efficient luminescent material that emits light that is very close to the human eye’s maximum sensing wavelength. However, since gallium phosphide has a high melting point (about 1470 ° C) and high decomposition pressure (about 35 atm) at this temperature, it is difficult to produce large-diameter gallium phosphide single crystals whose equipment is required to be able to withstand high temperatures and high pressure. The current preparation of gallium phosphide crystals are mainly the following processes: