功率晶体管的损坏主要是由于二次击穿。关于二次击穿的机理目前虽然还不十分清楚,但在许多资料上都有介绍。为了避免功率晶体管的损坏,就要使负载线的动态范围不超出高频安全区。实际应用表明,集电极与发射极之间的高频峯对峯电压(以下简称峯压)是一个主 Power transistor damage is mainly due to secondary breakdown. Although the mechanism of secondary breakdown is not yet clear, it is described in many sources. In order to avoid damage to the power transistor, it is necessary to make the dynamic range of the load line does not exceed the high-frequency safety zone. Practical application shows that the collector and emitter of the high-frequency peak-to-peak voltage (hereinafter referred to as peak pressure) is a master