A-IGZO相关论文
Influence of Oxygen Partial Pressure on Characteristics of Amorphous IGZO Thin-Film Transistors Fabr
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详细地研究了溅射压强对a-IGZO薄膜的微结构和电学特性产生的影响。AFM分析表明,薄膜的表面粗糙度随溅射压强的增加而增大。XPS分......
,Photoresponsive characteristics of thin film transistors with perovskite quantum dots embedded amor
Photodetectors based on amorphous InGaZnO (a-IGZO) thin film transistor (TFT) and halide perovskites have attracted atte......
Transparent oxide semiconductor, a-IGZO, thin films were prepared by high-vacuum RF magnetron sput-tering at different w......
Photoresponsive characteristics of thin film transistors with perovskite quantum dots embedded amorp
Photodetectors based on amorphous InGaZnO(a-IGZO)thin film transistor(TFT)and halide perovskites have attracted attentio......
We report a high-performance active image sensor pixel design by utilizing amorphous-indium-gallium-zinc-oxide(aIGZO) th......
This paper investigates the variation of electrical characteristic of indium gallium zinc oxide (IGZO) thin film transis......
非晶铟镓锌氧化物薄膜晶体管(Amorphous Indium Gallium Zinc Oxide Thin Film Transistor,a-IGZO TFT)凭着迁移率高、均一性好、......
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为了满足对于航空航天、工业燃油涡轮机、石油与天然气等工业领域的探索,满足在高温环境下传感器测试以及读取系统的稳定工作,制造......
目前,显示技术的突飞猛进,传统的材料如非晶硅由于其透光性差,迁移率低等问题已无法满足人们对显示的高需求。寻找可代替非晶硅的......
基于氧化物半导体的薄膜晶体管(TFT)由于其良好的电学特性和易于制备的优势而获得了研究人员的极大关注,例如此类器件通常具有较高......
显示器的应用终端目前已经细致分为工业控制、医疗显示、车载显示、移动显示、民用计算机显示、虚拟现实显示和大尺寸影像显示。大......
