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本文用真空蒸发法在玻璃衬底上蒸镀Cu-In-Al多层膜,后采用真空硒化退火获得Al含量不同的Cu(In1-xAlx)Se2多晶薄膜。通过SEM和XRD微观形貌结构分析发现,薄膜中Al的含量对薄膜的表面形貌和结构有一定影响。Al/(In+Al)比例越大,越容易获得尺寸较小、分布比较均匀的晶粒。同时Al含量对薄膜的方阻有一定的影响,Al含量越高,方阻越大。而且Al含量的多少可以调节薄膜的禁带宽度的大小。
In this paper, Cu-In-Al multilayers were deposited on glass substrates by vacuum evaporation, and then Cu (In1-xAlx) Se2 polycrystalline films with different Al contents were obtained by vacuum selenization annealing. It was found by SEM and XRD microstructure analysis that the content of Al in the film had an influence on the surface morphology and structure of the film. The larger the Al / (In + Al) ratio, the easier it is to obtain smaller and more evenly distributed grains. At the same time Al content has a certain influence on the square resistance of the film, the higher the Al content, the larger the square resistance. And how much Al content can adjust the size of the band gap.