论文部分内容阅读
介绍了ＩｎＧａＮ单量子阱超高亮度蓝色ＬＥＤ的结构和性能，其发光强度、峰值波长和光谱半宽在正向电流为２０ｍＡ时，分别为８ｃｄ、４５０ｎｍ和２５ｎｍ。
The structure and performance of InGaN single quantum well ultra-high brightness blue LED are introduced. The luminescence intensity, peak wavelength and half width of spectrum are 8cd, 450nm and 25nm respectively when the forward current is 20mA.