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采用分子束外延技术在蓝宝石衬底上制备Ｍｇ掺杂的立方相ｐ－ＧａＮ，并对其不同温度下的光致发光光谱进行了研究．实验观察到高Ｍｇ掺杂ＧａＮ中施主受主对发光的反常温度行为．理论分析表明，高Ｍｇ掺杂ＧａＮ中施主受主对的发光受到陷阱与受主间竞争俘获非平衡空穴过程和空穴隧穿输运过程的影响．
The Mg-doped cubic phase p-GaN was prepared by molecular beam epitaxy on a sapphire substrate. The photoluminescence spectra at different temperatures were studied. The abnormal temperature behavior of donor acceptor luminescence in high-Mg-doped GaN was observed experimentally. Theoretical analysis shows that the luminescence of donor acceptor pairs in high-Mg-doped GaN is trapped by the competitive capture of non-equilibrium holes and transport of hole tunneling between acceptors.