论文部分内容阅读
日本富士通公司开发出新光致抗蚀剂技术,可用于制造大规模生产256M DRAM所需的0.2微米线宽的掩模。新技术利用的是负抗蚀剂。此前,负抗蚀剂不能用于刻蚀最细的线条,因为普通光致抗蚀剂处理包括显影步骤,而显影会使抗蚀剂膨胀,使线条变宽。新技术的主要特征是,新显影方法可防止膨胀。某些大规模集成电路用的正抗蚀剂光敏度不佳。负抗蚀剂虽光敏度较高,但在与显影剂接蚀后不到1秒钟即开始膨胀。为此,富士通利用SLEDER显影技术,通过重复显影、冲洗、
Fujitsu Japan has developed a new photoresist technology that can be used to make 0.2-micron line width masks required for mass production of 256M DRAM. The new technology uses a negative resist. Previously, negative resist could not be used to etch the thinnest lines because normal photoresist processing included a development step, and development caused the resist to swell, broadening the lines. The main feature of the new technology is that the new developing method prevents expansion. Positive resist for some LSIs has poor photosensitivity. Although the negative resist has high photosensitivity, it begins to swell in less than one second after being etched with the developer. To this end, Fujitsu use SLEDER development technology, through the repeated development, washing,