报道了窄条宽选区生长有机金属化学气相沉积 (NSAG- MOCVD)成功生长的 In P系材料 ,并提出在 NSAG-MOCVD生长研究中 ,引入填充因子的必要性 ,给出速率增强因子随填充因子变化的经验公式 ,计算得出速率增强因子随填充因子的变化关系 .与实验结果作了比较 ,发现 In P的速率增强因子主要取决于掩膜宽度 ,In Ga As P的速率增强因子不仅与掩膜宽度有关 ,同时也依赖于生长厚度 ,且这种依赖性随掩膜宽度的增加而增加 Reported the successful growth of InP materials by narrow-width and wide-area growth by metalorganic chemical vapor deposition (NSAG-MOCVD), and proposed the necessity of introducing filling factor in NSAG-MOCVD growth study. The results show that the rate- And the change empirical formula, we can get the change of the rate enhancement factor with the fill factor.Compared with the experimental results, it is found that the rate enhancement factor of In P mainly depends on the mask width. The rate enhancement factor of In Ga As P is not only related to the mask The film width is also dependent on the growth thickness, and this dependence increases with increasing mask width